Fairchild Semiconductor TIP41A, TIP41, TIP41C, TIP41B Datasheet
TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
• Complement to TIP42/42A/42B/42C
TIP41 Series(TIP41/41A/41B/41C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Emitter Voltage: TIP41
Collector-Emitter Voltage: TIP41
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
Collector Current (Pulse) 10 A
Base Current 2 A
Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International Rev. A, February 2000
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: TIP41A
: TIP41B
: TIP41C
: TIP41A
: TIP41B
: TIP41C
TC=25°C unless otherwise noted
: TIP41
: TIP41A
: TIP41B
: TIP41C
: TIP41/41A
: TIP41B/41C
: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
40
60
80
100
I
= 30mA, IB = 0
C
40
60
80
100
= 30V, I
V
CE
= 60V, IB = 0
V
CE
= 40V, V
V
CE
= 60V, V
V
CE
V
= 80V, V
CE
= 100V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 4V,IC = 0.3A
CE
= 4V, IC = 3A
V
CE
= 4V, IC = 6A
CE
= 10V, IC = 500mA 3.0 MHz
CE
B =
EB
EB
EB
EB
0
= 0
= 0
= 0
= 0
0.7
0.7mAmA
400
400
400
400
30
15
V
V
V
V
V
V
V
V
75
2.0 V
V
V
V
V
µA
µA
µA
µA
Typical Characteristics
TIP41 Series(TIP41/41A/41B/41C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
VCE = 4V
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
IC(MAX) (PULSE)
10
IC(MAX) (DC)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
TIP41 V
TIP41A V
TIP41B V
TIP41C V
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.5ms
1ms
5ms
MAX.
CEO
MAX.
CEO
MAX.
CEO
MAX.
CEO
10000
IC/IB = 10
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VBE(sat)
VCE(sat)
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
80
60
40
20
[W], POWER DISSIPATION
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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