Fairchild Semiconductor TIP32C, TIP32B, TIP32, TIP32A Datasheet
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
TIP32 Series(TIP32/32A/32B/32C)
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage : TIP32
Collector-Emitter Voltage : TIP32
Emitter-Base Voltage - 5 V
Collector Current (DC) - 3 A
Collector Current (Pulse) - 5 A
Base Current - 3 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 375mA - 1.2 V
V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International Rev. A, February 2000
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: TIP32A
: TIP32B
: TIP32C
: TIP32A
: TIP32B
: TIP32C
TC=25°C unless otherwise noted
: TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32/32A
: TIP32B/32C
: TIP32
: TIP32A
: TIP32B
: TIP32C
- 40
- 60
- 80
- 100
- 40
- 60
- 80
-100
I
= - 30mA, IB = 0 -40
C
-60
-80
-100
= - 30V, IB = 0
V
CE
= - 60V, IB = 0
V
CE
= - 40V, V
V
CE
= - 60V, V
V
CE
V
= - 80V, V
CE
= - 100V, V
V
CE
= - 5V, IC = 0 - 1 mA
EB
= - 4V, IC = - 1A
CE
= - 4V, IC = - 3A
V
CE
= - 4V, IC = - 3A - 1.8 V
CE
= - 10V, IC = - 500mA 3.0 MHz
CE
EB
EB
EB
CE
= 0
= 0
= 0
= 0
- 0.3
- 0.3mAmA
- 200
- 200
- 200
- 200
25
10 50
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
Typical Characteristics
TIP32 Series(TIP32/32A/32B/32C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
5ms
100µs
1ms
-10
[A], COLLECTOR CURRENT
C
I
-0.1
IC(MAX) (PULSE)
IC(MAX) (DC)
-1
TIP32 V
CEO
TIP32A V
TIP32B V
TIP32C V
-10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = -4V
-10000
-1000
VBE(sat)
-100
(sat)[mV], SATURAT I O N VOL TA G E
CE
(sat), V
BE
-10
V
VCE(sat)
-1 -10 -100 -1000 -10000
IC/IB = 10
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
50
45
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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