Fairchild Semiconductor TIP31A, TIP31, TIP31C, TIP31B Datasheet
TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
TIP31 Series(TIP31/31A/31B/31C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
V
CEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage 5 V
Collector Current (DC) 3 A
Collector Current (Pulse) 5 A
Base Current 1 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
=25°C unless otherwise noted
C
TC=25°C unless otherwise noted
: TIP31
: TIP31A
= 30mA, IB = 0 40
I
C
: TIP31B
: TIP31C
= 30V, IB = 0
V
CE
V
= 60V, IB = 0
CE
: TIP31
: TIP31A
: TIP31B
: TIP31C
= 40V, V
V
CE
= 60V, V
V
CE
V
= 80V, V
CE
= 100V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 4V, IC = 1A
CE
= 4V, IC = 3A
V
CE
= 4V, IC = 3A 1.8 V
CE
= 10V, IC = 500mA 3.0 MHz
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
40
60
80
100
40
60
80
100
60
80
100
0.3
0.3mAmA
200
200
200
200
25
10 50
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
TIP31 Series(TIP31/31A/31B/31C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
5ms
100µs
1ms
10
IC(MAX) (PULSE)
IC(MAX) (DC)
1
TIP31 V
[A], COLLECTOR CURRENT
C
I
0.1
CEO
TIP31A V
TIP31B V
TIP31C V
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = 4V
10000
IC/IB = 10
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VBE(sat)
VCE(sat)
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
50
45
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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