Fairchild Semiconductor TIP30B, TIP30A, TIP30, TIP30C Datasheet
TIP30 Series(TIP30/30A/30B/30C)
Medium Power Linear Switching Applications
• Complementary to TIP29/29A/29B/29C
TIP30 Series(TIP30/30A/30B/30C)
TO-220
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
Collector-Emitter Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
- 40
- 60
- 80
- 100
- 40
- 60
- 80
- 100
Emitter-Base Voltage - 5 V
Collector Current (DC) - 1 A
Collector Current (Pulse) - 3 A
Base Current - 0.4 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
: TIP30
: TIP30A
: TIP30B
: TIP30C
ICEO
Collector Cut-off Current
: TIP30/30A
: TIP30B/30C
I
CES
Collector Cut-off Current
: TIP30
: TIP30A
: TIP30B
: TIP30C
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = -1A, IB = -125mA -0.7 V
V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= -30mA, IB = 0
I
C
-40
-60
-80
= -30V, IB = 0
V
CE
V
= -60V, IB = 0
CE
= -40V, V
V
CE
= -60V, V
V
CE
V
= -80V, V
CE
= -100V, V
V
CE
= -5V, IC = 0 -1.0 mA
EB
= -4V,IC = -0.2A
CE
= -4V, IC = -1A
V
CE
= -4V, IC = -1A -1.3 V
CE
= -10V, IC = -200mA 3.0 MHz
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
-100
-0.3
-0.3mAmA
-200
-200
-200
-200
40
15 75
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
TIP30 Series(TIP30/30A/30B/30C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
1ms
5ms
DC
-10
[A], COLLECTOR CURRENT
C
I
-0.1
IC(MAX) (PULSE)
IC(MAX) (DC)
-1
TIP30 V
CEO
TIP30A V
TIP30B V
TIP30C V
-10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = -4V
-10000
IC/IB = 10
-1000
-100
(sat)[mV], SATURAT I O N VOL TA G E
CE
(sat), V
BE
-10
V
VBE(sat)
VCE(sat)
-1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Loading...