TIP29 Series(TIP29/29A/29B/29C)
Medium Power Linear Switching Applications
• Complementary to TIP30/30A/30B/30C
TIP29 Series(TIP29/29A/29B/29C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Collector-Base Voltage : TIP29
Collector-Emitter Voltage : TIP29
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 3 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V
V
CE
(sat) *Base-Emitter Saturat ion Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
40
: TIP29A
: TIP29B
: TIP29C
60
80
100
40
: TIP29A
: TIP29B
: TIP29C
=25°C) 2 W
a
60
80
100
TC=25°C unless otherwise noted
: TIP29
: TIP29A
: TIP29B
: TIP29C
: TIP29/29A
: TIP29B/29C
: TIP29
: TIP29A
: TIP29B
: TIP29C
I
= 30mA, IB = 0 40
C
60
80
100
= 30V, IB = 0
V
CE
= 60V, IB = 0
V
CE
V
= 40V, V
CE
= 60V, V
V
CE
= 80V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1.0 mA
EB
= 4V, IC = 0.2A
CE
= 4V, IC = 1A
V
CE
= 4V, IC = 1A 1.3 V
CE
= 10V, IC = 200mA 3.0 MHz
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
200
200
200
200
40
15 75
0.3
0.3mAmA
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP29 Series(TIP29/29A/29B/29C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
1ms
5ms
DC
10
1
[A], COLLECTOR CURRENT
C
I
0.1
IC(MAX) (PULSE)
IC(MAX) (DC)
TIP29 V
CEO
TIP29A V
TIP29B V
TIP29C V
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = 4V
10000
IC/IB = 10
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VBE(sat)
VCE(sat)
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
TIP29 Series(TIP29/29A/29B/29C)
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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