Fairchild Semiconductor TIP29B, TIP29A, TIP29C, TIP29 Datasheet
TIP29 Series(TIP29/29A/29B/29C)
Medium Power Linear Switching Applications
• Complementary to TIP30/30A/30B/30C
TIP29 Series(TIP29/29A/29B/29C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Collector-Base Voltage : TIP29
Collector-Emitter Voltage : TIP29
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 3 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V
V
CE
(sat) *Base-Emitter Saturat ion Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
40
: TIP29A
: TIP29B
: TIP29C
60
80
100
40
: TIP29A
: TIP29B
: TIP29C
=25°C) 2 W
a
60
80
100
TC=25°C unless otherwise noted
: TIP29
: TIP29A
: TIP29B
: TIP29C
: TIP29/29A
: TIP29B/29C
: TIP29
: TIP29A
: TIP29B
: TIP29C
I
= 30mA, IB = 0 40
C
60
80
100
= 30V, IB = 0
V
CE
= 60V, IB = 0
V
CE
V
= 40V, V
CE
= 60V, V
V
CE
= 80V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1.0 mA
EB
= 4V, IC = 0.2A
CE
= 4V, IC = 1A
V
CE
= 4V, IC = 1A 1.3 V
CE
= 10V, IC = 200mA 3.0 MHz
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
200
200
200
200
40
15 75
0.3
0.3mAmA
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP29 Series(TIP29/29A/29B/29C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
1ms
5ms
DC
10
1
[A], COLLECTOR CURRENT
C
I
0.1
IC(MAX) (PULSE)
IC(MAX) (DC)
TIP29 V
CEO
TIP29A V
TIP29B V
TIP29C V
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = 4V
10000
IC/IB = 10
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VBE(sat)
VCE(sat)
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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