Fairchild Semiconductor SSS70N10A Datasheet

Advanced Power MOSFET

SSS70N10A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

C

175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.018 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

O O

O O O

BV R I

= 100 V

DSS

DS(on)

= 28 A

D

= 0.023

Ω

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

100

28

19.8

1

2

1 1

3

220

+

_

20

1568

28

4.9

6.5 49

0.32

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

Symbol Typ.

R

JC

θ

R

JA

θ

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

3.09

62.5

Ο

/W

C

Rev. B

SSS70N10A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

100

10

100

--

980 430

60

60 240 180 195

--

V

GS

Ο

I

V/

µ

=250 A See Fig 7

C

D

V

nA

A

Ω

pF

ns

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=14A

V

GS

=40V,ID=14A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=70A,

DD

=5.3

R

G

See Fig 13

V

=80V,VGS=10V,

DS

nC

I

=70A

D

See Fig 6 & Fig 12

µ

--

0.12

--

34.51 3750

850 375

22 24

112

84

151

31 66

-100

0.023

4870

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=3mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=28A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

70A, di/dt 530A/ s, VDD BV

_

<

--

28

1

--

143

0.72

220

1.6

--

O

4

--

O

--

Ω

DSS

µ

, Starting TJ =25

_

<

o

C

o

_

<

C

Integral reverse pn-diode

A

in the MOSFET

Ο

C

T

=25 ,IS=28A,VGS=0V

J

Ο

C

T

=25 ,IF=70A

J

/dt=100A/ s

di

F

ns

µ

V

C

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

2

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

SSS70N10A

2

10

o

C

175

1

10

, Drain Current [A]

D

I

0

10

-1

10

@ Notes :

1. 250

s Pulse Test

µ

2. T

= 25 oC

C

0

10

VDS , Drain-Source Voltage [V]

0.03

VGS = 10 V

]

0.02

Ω

, [

DS(on)

R

0.01

VGS = 20 V

Drain-Source On-Resistance

0.00 0 50 100 150 200 250 300

ID , Drain Current [A]

8000

6000

C

iss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Note : TJ = 25 oC

1

10

o

25

C

, Drain Current [A]

D

I

0

10

2 4 6 8 10

- 55

o

C

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

, Reverse Drain Current [A]

o

175

C

DR

I

0

10

o

25

C

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

@ Notes :

1. V

= 0 V

GS

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

10

= 50 V

V

DS

VDS = 80 V

DS

4000

Capacitance [pF]

2000

C

oss

C

rss

0

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

5

, Gate-Source Voltage [V]

GS

V

1

10

0

0 20 40 60 80 100 120 140 160

QG , Total Gate Charge [nC]

@ Notes : ID =70.0 A