Fairchild Semiconductor SSS6N70A Datasheet

Advanced Power MOSFET

SSS6N70A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low R

: 1.552 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25

C

=100

C

Ο

C)

Ο

C)

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Total Power Dissipation (T

C

=25

Ο

C )

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O

O O O

O

BV R I

DSS

DS(on)

= 4 A

D

= 700 V

= 1.8 Ω

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

700

4

2.5 24

+

_

1

2

1 1

3

30

560

4 4

2.5 40

0.32

- 55 to +150

300

V

A

A V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

Symbol Typ.

R

θ

JC

R

θ

JA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

3.13

62.5

Ο

C/W

Rev. B

SSS6N70A

Electrical Characteristics (T

Ο

=25

C unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

DSS

∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge

700

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250µA

V

--

4.0

100

25

250

1.8

--

115

55 45 55

160

60 67

--

V

GS

Ο

I

V/

nA

µA

=250µA See Fig 7

C

D

V

Ω

pF

ns

=5V,ID=250µA

DS

V

=30V

GS

V

=-30V

GS

V

=700V

DS

V

=560V,TC=125

DS

VGS=10V,ID=2A * VDS=50V,ID=2A

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=350V,ID=6A,

DD

=11.5§Ù

R

G

See Fig 13

V

=560V,VGS=10V,

DS

nC

I

=6A

D

See Fig 6 & Fig 12

--

0.79

--

3.22 920 100

45 18 23 76 26 51

8.3

23.1

-100

1200

Ο

O

C

4

O

4

O

4

5

O

4

O5O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=65mH, I

O

3

I

O

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=4A, VDD=50V, RG=27Ω, Starting TJ =25ΟC

AS

_

<

6A, di/dt 140A/µs, VDD BV

SD

_

<

, Starting TJ =25ΟC

_

<

DSS

O O

--

440

4

24

1.4

--

A

V ns µC

--

1

4

--

4.05

--

_

<

Integral reverse pn-diode in the MOSFET

Ο

T

=25

C ,I

J

T

=25

J

/dt=100A/µs

di

F

=4A,VGS=0V

S

Ο

C ,I

=6A

F

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V

1

10

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

0

10

, Drain Current [A]

D

-1

10

I

-1

10

0

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

SSS6N70A

1

10

o

C

150

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

2 4 6 8 10

- 55

o

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 50 V

DS

s Pulse Test

µ

6

= 10 V

V

]

4

Ω

GS

, [

DS(on)

R

2

VGS = 20 V

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0

0 5 10 15 20

ID , Drain Current [A]

1500

C

iss

1000

500

Capacitance [pF]

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

VDS , Drain-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

@ Notes :

1. V

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150 oC

o

25

C

2. 250

= 0 V

GS

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Voltage [V]

GS

V

0

0 10 20 30 40 50 60

VDS = 140 V

= 350 V

V

DS

VDS = 560 V

@ Notes : ID = 6.0 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor SSS6N70A Datasheet

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