Fairchild Semiconductor SSS1N50B Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B, May 2002

SSP1N50B

SSP1N50B

520V N-Channel M OSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.

Features

• 1.5A, 520V, R

DS(on)

= 5.3Ω @VGS = 10 V

• Low gate charge ( typical 8.3 nC)

• Low Crss ( typical 5.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter SSP1N50B Units

V

DSS

Drain-Source Voltage 520 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

1.5 A

- Continuous (T

C

= 100°C)

0.97 A

I

DM

Drain Current - Pulsed

(Note 1)

5.0 A

V

GSS

Gate-Source Voltage ± 30 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

100 mJ

I

AR

Avalanche Current

(Note 1)

1.5 A

E

AR

Repetitive Avalanche Energy

(Note 1)

3.6 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

3.5 V/ns

P

D

Power Dissipation (TC = 25°C)

36 W

- Derate above 25°C 0.29 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

R

θJC

Thermal Resistance, Junction-to-Case -- 3.44 °C/W

R

θCS

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

TO-220

SSP Series

G

S

D

!!!!

!!!!

!!!!

""""

!!!!

!!!!

!!!!

####

!!!!

!!!!

!!!!

""""

!!!!

!!!!

!!!!

####

S

D

G

Rev. B, May 2002

SSP1N50B

©2002 Fairchild Semiconductor Corporation

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 80mH, IAS = 1.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BV

DSS,

Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, ID = 250 µA

520 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature
Coefficient

I

D

= 250 µA, Referenced to 25°C

-- 0.54 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 520 V, VGS = 0 V

-- -- 10 µA

V

DS

= 400 V, TC = 125°C

-- -- 100 µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 30 V, VDS = 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -30 V, VDS = 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250 µA

2.0 -- 4.0 V

R

DS(on)

Static Drain-Source
On-Resistance

V

GS

= 10 V, ID = 0.75 A

-- 4.1 5.3 Ω

g

FS

Forward Transconductance

V

DS

= 40 V, ID = 0.75 A

-- 1.8 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, VGS = 0 V,

f = 1.0 MHz

-- 260 340 pF

C

oss

Output Capacitance -- 25 33 pF

C

rss

Reverse Transfer Capacitance -- 5.5 7.2 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 250 V, ID = 1.5 A,

R

G

= 25 Ω

-- 14 40 ns

t

r

Turn-On Rise Time -- 40 90 ns

t

d(off)

Turn-Off Delay Time -- 35 80 ns

t

f

Turn-Off Fall Time -- 35 80 ns

Q

g

Total Gate Charge

V

DS

= 400 V, ID = 1.5 A,

V

GS

= 10 V

-- 8.3 11 nC

Q

gs

Gate-Source Charge -- 1.5 -- nC

Q

gd

Gate-Drain Charge -- 3.4 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 5.0 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, IS = 1.5 A

-- -- 1.4 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, IS = 1.5 A,

dI

F

/ dt = 100 A/µs

-- 230 -- ns

Q

rr

Reverse Recovery Charge -- 0.94 -- µC

Rev. B, May 2002

SSP1N50B

©2002 Fairchild Semiconductor Corporation

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

-1

10

0

150

$

%

Note s :

1. V

GS

= 0V

2. 250&s Pulse Test

25

$

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

012345

3

6

9

12

15

VGS = 20V

VGS = 10V

%

Note : T

J

= 25

$

R

DS(ON)

[

'

],

Drain-Source On-Resistance

ID, Drain Current [A]

246810

10

-1

10

0

150oC

25oC

-55oC

%

Note s :

1. V

DS

= 40V

2. 250&s Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Botto m : 5.0 V

%

Note s :

1. 25 0&s Pulse Test

2. TC = 25

$

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0.0 1.5 3.0 4.5 6.0 7.5 9.0

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

%

Note : I

D

= 1.5 A

V

GS

, Gate-Source Voltage [V]

QG, Tota l G a te C h a rg e [n C ]

10

-1

10

0

10

1

0

100

200

300

400

500

C

oss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

%

Note s :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact eristics