Fairchild Semiconductor MPSA56, MMBTA56, PZTA56 Datasheet
Discrete POWER & Signal
Technologies
MMBTA56MPSA56 PZTA56
MPSA56 / MMBTA56 / PZTA56
C
E
C
B
E
TO-92
SOT-23
Mark: 2G
B
C
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA56 *MMBTA56 **PZTA56
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
C/W
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Co ll ector-E m itter Breakdown Vol tage* IC = 1.0 mA, IB = 0 80 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 80 V
Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
I
E
4.0 V
Collector-Cutoff Current VCE = 60 V, IB = 0 0.1
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Cu r re n t Ga in IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0. 25 V
)
C
100
100
Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 100 mA, VCE = 1.0 V,
50 MHz
f = 10 0 M Hz
µ
A
µ
A
MPSA56 / MMBTA56 / PZTA56
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
250
200
150
100
50
0.001 0.01 0.1
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (A)
125 °C
25 °C
- 40 ºC
C
V = 1V
CE
Collector-Emitter Saturation
Voltage vs Col lector Current
0.8
ββ
= 10
0.6
0.4
25 °C
0.2
0
10 100
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
- 40 ºC
I - COL L EC T O R CU RRE NT (mA)
C
125 °C
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