Fairchild Semiconductor MPSA28, MMBTA28, PZTA28 Datasheet
Discrete POWER & Signal
Technologies
MMBTA28MPSA28 PZTA28
MPSA28 / MMBTA28 / PZTA28
C
E
C
B
E
TO-92
SOT-23
Mark: 3SS
B
C
C
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 12 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA28 *MMBTA28 **PZTA28
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 125 °C/W
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
°C/W
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Collector-Emitter Breakdown Voltage
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage
Colle c tor Cu tof f Cu r ren t VCB = 60 V, IE = 0 100 nA
Colle c tor Cu tof f Cu r ren t VCE = 60 V, V
Emit ter Cutoff C u rre nt VEB = 10 V, IC = 0 100 nA
ON CHARACTERISTICS
h
V
V
FE
CE(
BE(on)
sat
DC Cu r re n t Ga in IC = 10 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.01 mA
)
Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V
= 100 µA, VBE = 0
I
C
= 10 µA, IC = 0
I
E
= 0 500 nA
BE
= 100 mA, VCE = 5.0 V
I
C
= 100 mA, IB = 0.1 mA
I
C
80 V
12 V
10,000
10,000
1.2
1.5
V
MPSA28 / MMBTA28 / PZTA28
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0,
Output Capacitance VCB = 1.0 V, IE = 0, f = 1.0 MHz 8.0 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Ty pical Pulsed Current Gain
vs Co ll ector Current
100
V = 5V
CE
80
60
40
- 40 °C
20
0
0.001 0.01 0.1 0.2
FE
h - TYPICAL PULSED CURRENT GAIN (K)
25 °C
I - COLLECTOR CURRENT (A)
C
125 °C
f = 10 0 M Hz
125 MHz
Collector -Emitte r S aturatio n
Volta g e vs Co llector Cu rren t
1.6
1.2
0.8
0.4
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
ββ
= 1000
- 40 ºC
25 ºC
125 ºC
0
1 10 100 1000
I - COLLE CT O R CURRENT (mA)
C
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