Fairchild Semiconductor MPSA18 Datasheet
MPSA18
MPSA18
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for low noise, high gain, applications at
collector currents from 1µ A to 50 mA. Sourced from Process
07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
µµ
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Em i t ter- Base Voltage 6. 5 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
MPSA18
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
625
5.0
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
mW
mW/°C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
C ollect or-Emi tter B r eakdown Vol t age* IC = 10 mA, IB = 0 45 V
C ollect or-Bas e Break down Vol t age IC = 100 µA, IE = 0 45 V
Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.5 V
Co llector Cutoff C u rre n t VCB = 30 V, IE = 0 50 nA
DC Cu r re n t Ga in
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
)
= 5.0 V, IC = 10 µA
V
CE
= 5.0 V, IC = 100 µA
V
CE
= 5.0 V, IC = 1.0 mA
V
CE
V
= 5.0 V, IC = 10 mA
CE
= 50 mA, IB = 5.0 mA
I
C
400
500
500
500 1500
Base-Emitter On Voltage VCE = 5.0 V, IC = 1.0 mA 0.7 V
0.2
0.3
V
V
MPSA18
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
f
T
NF Noise Figure VCE = 5.0 V, IC = 100 µA,
Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 3.0 pF
Em i t ter- Base Capacitance VEB = 0.5 V, f = 1.0 MHz 6.5 pF
Current Gain - Bandwidth Product IC = 1.0 mA, VCE = 5.0 V,
f = 100 MHz
= 10 kΩ, f = 1.0 kHz,
R
S
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
100 MHz
1.5 dB
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