Fairchild Semiconductor MPSA12 Datasheet
MPSA12
MPSA12
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from Process
05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 20 V
Collector-Base Voltage 20 V
Em i t ter - Bas e V olt ag e 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
MPSA12
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 20 V
Collector Cutoff Current VCB = 15 V, IE = 0 100 nA
Emitter Cu toff Current VCE = 15 V, IC = 0 100 nA
Emitter Cu toff Current VEB = 10 V, IC = 0 100 nA
DC Cu r re nt Ga in VCE = 5.0 V, IC = 10 Ma 20,0 00
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.01 mA 1.0 V
)
Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 1.4 V
MPSA12
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