Fairchild Semiconductor MPSA06, MMBTA06, PZTA06 Datasheet
Discrete POWER & Signal
Technologies
MMBTA06MPSA06 PZTA06
MPSA06 / MMBTA06 / PZTA06
C
E
C
B
E
TO-92
SOT-23
Mark: 1G
B
C
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
C/W
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage IE = 100 µA, IC = 0 4.0 V
Collector-Cutoff Current VCE = 60 V, IB = 0 0.1
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Cu r re n t Ga in IC = 10 mA, VCE = 1.0 V
= 100 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0. 25 V
)
C
100
100
Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
100 MHz
f = 10 0 M Hz
µ
A
µ
A
MPSA06 / MMBTA06 / PZTA06
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Curr ent
200
125 °C
150
25 °C
100
- 40 ºC
50
0.001 0.01 0.1
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (A)
C
V = 1V
CE
Coll ecto r-Emitte r Satu ra tion
V oltage vs Collector Current
0.5
0.4
0.3
0.2
0.1
0
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
ββ
= 10
125 °C
25 °C
- 40 ºC
0.1 1 10 100 1000
I - COLLEC TOR CUR RENT (mA)
C
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