Fairchild Semiconductor MPS8098 Datasheet
MPS8098
MPS8098
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 6. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
MPS8098
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 060V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 60 V
Em i t ter - Bas e B reakdown Volt ag e
= 10 µA, IC = 0
I
E
Collector Cutoff Current VCB = 60 V, IE = 0 0.1
Collector Cutoff Current VCE = 60 V, IB = 0 0.1
Emitter Cu toff Curre n t VEB = 6.0 V, IC = 0 0.1
DC Cu r re n t Ga in VCE = 5.0 V, IC = 1.0 mA
= 5.0 V, IC = 10 mA
V
CE
= 5.0 V, IC = 100 mA
V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 5.0 mA
)
CE
= 100 mA, IB = 10 mA
I
C
6.0 V
100
300
100
75
0.4
0.3
µ
A
µ
A
µ
A
V
V
Base-Emitter On Voltage VCE = 5.0 V, IC = 1.0 mA 0.5 0.7 V
MPS8098
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
f
T
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 6.0 pF
Input Capacitance VEB = 0.5 V, f = 1.0 MHz 25 pF
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 10 0 M Hz
150 MHz
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