Fairchild Semiconductor MPS751 Datasheet
Silicon PNP Transistor (Note 1)
• Low Saturation Voltage
MPS751
MPS751
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage -60 V
Collector Current (DC) 2 A
Collector Dissipation (Ta=25°C) (Note 2, 3) 625 mW
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 200mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.2 V
V
BE
(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 1 V
V
BE
f
T
Collector-Base Voltage IC = 100µA-80V
Collector-Emitter Voltage IC = 10mA -60 V
Emitter-Base Voltage IE = 10µA-5V
Collector Cut-off Current VCB = 30V 100 nA
Emitter Cut-off Current VEB = 3V 100 nA
DC Current Gain VCE = 2V, IC = 50mA
V
= 2V, IC = 500mA
CE
= 2V, IC = 1A
V
CE
= 2V, IC = 2A
V
CE
75
75
75
40
0.5
I
= 1A, IB = 100mA
C
Current gain Bandwidth Product VCE = 5V, IC = 50mA
75 MHz
0.3
f = 100MHz
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
V
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
MPS751
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
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