Fairchild Semiconductor MPS5179, MMBT5179, PN5179 Datasheet
Discrete POWER & Signal
Technologies
MPS5179 / MMBT5179 / PN5179
MPS5179 MMBT5179
C
C
B
E
TO-92
SOT-23
Mark: 3C
E
B
PN5179
C
E
B
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 µA to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 12 V
Collector-Base Voltage 20 V
Emitter-Base Voltage 2.5 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN/MPS5179 *MMBT5179
P
D
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
5179, Rev B
(BR)
(BR)
µ
µ
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
sus
CEO(
V
CBO
V
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
rb’C
c
NF Noise Figure IC = 1.5 mA, VCE = 6.0 V,
Collector-Emitter Sustaining Volta ge* IC = 3.0 mA, IB = 0 12 V
)
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 1.0 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector Cutoff Current VCB = 15 V, I
V
= 15 V, TA = 150°C
CB
= 0
E
20 V
2.5 V
DC Current Gain IC = 3.0 mA, VCE = 1.0 V 25 250
Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.4 V
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V
)
Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 6.0 V,
900 2000 MHz
f = 100 MHz
Collector-Base Capa citance VCB = 10 V, IE = 0,
f = 0.1 to 1.0 MHz
Small-Si gnal Current Gain IC = 2.0 mA, VCE = 6.0 V,
25 300
f = 1.0 kHz
Collector Base Time Constant IC = 2.0 mA, VCB = 6.0 V,
3.0 14 ps
f = 31.9 MHz
R
= 50Ω, f = 200 MHz
S
0.02
1.0
1.0 pF
5.0 dB
A
A
MPS5179 / MMBT5179 / PN5179
FUNCTIONAL TEST
G
pe
P
O
Amplifier Power Gain VCE = 6.0 V, IC = 5.0 mA,
f = 200 MHz
Power Output V
= 10 V, IE = 12 mA,
CB
f ≥ 500 MHz
15 dB
20 mW
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
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