Fairchild Semiconductor MJE182, MJE181, MJE180 Datasheet
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
MJE180/181/182
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
P
C
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : MJE180
: MJE181
: MJE182
Collector-Emitter Voltage : MJE180
: MJE181
: MJE182
60
80
100
40
60
80
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current 1 A
Collector Dissipation (Ta=25°C) 1.5 W
Collector Dissipation (TC=25°C) 12.5 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 150mA
BE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
Collector Cut-off Current : MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
I
= 10mA, IB = 0
C
40
60
V
= 60V, IB = 0
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 60V, IE = 0 @ TC = 150°C
V
CB
V
= 80V, IE = 0 @ TC = 150°C
CB
= 100V, IE = 0 @ TC = 150°C
V
CB
= 7V, IC = 0 0.1 µA
BE
= 1V, IC = 100mA
CE
= 1V, IC = 500mA
V
CE
V
= 1V, IC = 1.5A
CE
= 1.5A, IB = 150mA
I
C
= 3A, IB = 600mA
I
C
= 3A, IB = 600mA
I
C
= 1V, IC = 500mA 1.2 V
CE
= 10V, IC = 100mA 50 MHz
CE
= 10V, IE = 0, f = 0.1MHz 30 pF
CB
80
50
30
12
250
0.1
0.1
0.1
0.1
0.1
0.1
0.3
0.9
1.7
1.5
2.0
V
V
V
V
V
V
V
V
V
µA
µA
µA
mA
mA
mA
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristics
MJE180/181/182
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
5
4
3
IB=200mA
IB = 180mA
IB = 40mA
2
[A], COLLECTOR CURRENT
1
C
I
0
012345678910
IB = 20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
VBE(sat)
VCE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1
IC[A], COLLECTOR CURRENT
IC = 10I
1000
100
10
, DC CURRENT GAIN
FE
h
1
10 100 1000 10000
VCE = 5V
VCE=1V
IC[A], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
f=0.1MHZ
IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
ICMAX.(Pulse)
IC MAX.(DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Dissipation Limited
500
5ms
µ
s
S/B Limited
100
MJE180
Figure 4. Collector Output Capacitance
16
14
µ
s
MAX.
CE
V
MJE182
MJE181
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A1, February 2001
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