Fairchild Semiconductor MJD50, MJD47 Datasheet
MJD47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP47 and TIP50
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD47/50
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
IB
PC
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage
: MJD47
: MJD50
350
500
Collector-Emitter Voltage
: MJD47
: MJD50
250
400
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 2 A
Base Current 0.6 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
=25°C) 1.56 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
V
CEO
: MJD47
: MJD50
I
CEO
Collector Cut-off Current
: MJD47
: MJD50
I
CES
Collector Cut-off Current
: MJD47
: MJD50
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= 30mA, IB = 0 250
I
C
400
V
= 150V, IB = 0
CE
= 300V, IB = 0
V
CE
0.2
0.2mAmA
= 350, V
V
CE
V
= 500, V
CE
= 5V, IC = 0 1 mA
BE
= 10V, IC = 0.3A
CE
= 10V, IC = 1A
V
CE
= 10A, IC = 1A 1.5 V
CE
=10V, IC = 0.2A 10 MHz
CE
EB
EB
= 0
= 0
30
10
0.1
0.1mAmA
150
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
MJD47/50
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
1
s], TURN ON TIME
µ
[
0.1
D
, t
R
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
t
R
tD
VCE = 2V
VCC = 200V
IC = 5I
B
VCE(sat)
IC = 5 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
0.1
[µs], TURN OFF TIME
F
, t
STG
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
VCC = 200V
IC = 5I
B
t
STG
t
F
Figure 3. Turn On Time Figure 4. Turn Off Time
10
ICP(max)
1
IC(max)
0.1
0.01
[A], COLLECTOR CURRENT
C
I
1E-3
1 10 100 1000
500
µ
s
1ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
20
µ
s
MJD50
MJD47
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
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