Fairchild Semiconductor LED56F, LED55CF, LED55BF Datasheet

0.040 (1.02)

0.100 (2.54)

0.050 (1.27)

45°

0.040 (1.02)

13

0.030 (0.76)
NOM

0.184 (4.67)

0.209 (5.31)

1.00 (25.4)
MIN

ANODE
(CASE)

Ø0.020 (0.51) 2X

0.155 (3.94)
MAX

PACKAGE DIMENSIONS

FEATURES

• Good optical to mechanical alignment

• Mechanically and wavelength matched to the TO-18 series phototransistor

• Hermetically sealed package

• High irradiance level

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

GaAs INFRARED EMITTING DIODE

DESCRIPTION

The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.

SCHEMATIC



2001 Fairchild Semiconductor Corporation

DS300313 6/05/01 1 OF 4 www.fairchildsemi.com

LED55BF LED55CF LED56F

(Connected

ANODE

To Case)

CATHODE

3

1

www.fairchildsemi.com 2 OF 4 6/05/01 DS300313

NOTE:

1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning agents.

5. Soldering iron tip

1/16” (1.6mm) minimum from housing.

6. As long as leads are not under any stress or spring tension

7. Total power output, P

O

, is the total power radiated by the device into a solid angle of 2 ! steradians.

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-65 to +125 °C

Storage Temperature T

STG

-65 to +150 °C

Soldering Temperature (Iron)

(3,4,5 and 6)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(3,4 and 6)

T

SOL-F

260 for 10 sec °C

Continuous Forward Current I

F

100 mA

Forward Current (pw, 1µs; 200Hz) I

F

10 A

Reverse Voltage V

R

3V

Power Dissipation(TA= 25°C)

(1)

P

D

170 mW

Power Dissipation(TC= 25°C)

(2)

P

D

1.3 W

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF= 100 mA "

PE

— 940 — nm
Emission Angle at 1/2 Power # — ±40 — Deg.
Forward Voltage IF= 100 mA V

F

— — 1.7 V
Reverse Leakage Current VR= 3 V I

R

— — 10 µA
Total Power LED55BF

(7)

IF= 100 mA P

O

3.5 — — mW

Total Power LED55CF

(7)

IF= 100 mA P

O

5.4 — — mW

Total Power LED56F

(7)

IF= 100 mA P

O

1.5 — — mW

Rise Time 0-90% of output t

r

— 1.0 — µs
Fall Time 100-10% of output t

f

— 1.0 — µs

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C) (All measurements made under pulse conditions)

GaAs INFRARED EMITTING DIODE

LED55BF LED55CF LED56F