Fairchild Semiconductor L14N1, L14N2 Datasheet
0.038 (.97) NOM
45°
0.046 (1.16)
0.036 (0.92)
13
0.030 (0.76)
MAX
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
Ø0.021 (0.53) 3X
0.210 (5.34)
MAX
2
0.050 (1.27)
0.100 (2.54) DIA.
0.100 (2.54)
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Wide reception angle
• Device can be used as a photodiode by using the collector and base leads.
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300308 6/01/01 1 OF 4 www.fairchildsemi.com
SCHEMATIC
L14N1 L14N2
BASE 2
(CONNECTED TO CASE)
COLLECTOR
3
1
EMITTER
www.fairchildsemi.com 2 OF 4 6/01/01 DS300308
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BV
CEO
30 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BV
EBO
5—V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BV
CBO
40 — V
Collector-Emitter Leakage VCE= 10 V, Ee = 0 I
CEO
— 100 nA
Collector-Base leakage VCB= 25 V, Ee = 0 I
CBO
—25nA
Reception Angle at 1/2 Sensitivity θ ±40 Degrees
On-State Collector Current L14N1 Ee = 0.5 mW/cm2, VCE= 5 V
(7,8)
I
C(ON)
1.0 — mA
On-State Collector Current L14N2 Ee = 0.5 mW/cm2, VCE= 5 V
(7,8)
I
C(ON)
2.0 mA
On-State Photodiode Current Ee = 1.5 mW/cm2, VCB= 5 V
(7,8)
I
CB(ON)
5.0 µA
Rise Time IC= 10 mA, VCC= 5 V, RL=100 Ω t
r
14 µs
Fall Time IC= 10 mA, VCC= 5 V, RL=100 Ω t
f
16 µs
Saturation Voltage L14N1 IC= 0.8 mA, Ee = 3.0 mW/cm
2(7,8)
V
CE(SAT)
— 0.40 V
Saturation Voltage L14N2 IC= 1.6 mA, Ee = 3.0 mW/cm
2(7,8)
V
CE(SAT)
— 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Collector to Emitter Breakdown Voltage
V
CEO
30 V
Collector to Base Breakdown Voltage V
CBO
40 V
Emitter to Base Breakdwon Voltage V
EBO
5V
Power Dissipation(TA= 25°C)
(1)
P
D
300 mW
Power Dissipation(TC= 25°C)
(2)
P
D
600 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm
2
.
HERMETIC SILICON PHOTOTRANSISTOR
L14N1 L14N2
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