Fairchild Semiconductor KST92, KST93 Datasheet
KST92/93
KST92/93
High Voltage Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
• Refer to KSP92/93 for graphs
Electrical Characteristics
Collector Base Voltage
: KST92
: KST93
-300
-200
Collector-Emitter Voltage
: KST92
: KST93
-300
-200
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KST92
: KST93
BV
CEO
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
BV
I
CBO
EBO
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
Collector Cut-off Current
: KST92
: KST93
I
EBO
h
FE
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
* DC Current Gain
(sat) * Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.5 V
V
CE
V
(sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.9 V
BE
C
ob
Output Capacitance
: KST92
: KST93
f
T
Current Gain Bandwidth Product VCE= -20V, IC= -10mA
IC= -100µA, IE=0
IC= -1mA, IB=0
= -200V, IE=0
V
CB
= -160V, IE=0
V
CB
VCE= -10V, IC= -1mA
V
= -10V, IC= -10mA
CE
= -10V, IC= -30mA
V
CE
= -20V, IE=0
V
CB
f=1MHz
-300
-200
-300
-200
-0.25
-0.25
25
40
25
6
8
50 MHz
f=100MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
V
V
V
V
V
µA
µA
pF
pF
©2003 Fairchild Semiconductor Corporation Rev. B2, January 2003
Marking Code
Type KST92 KST93
Mark 2D 2E
KST92/93
Marking
2D
©2003 Fairchild Semiconductor Corporation Rev. B2, January 2003
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