Fairchild Semiconductor KST64, KST63 Datasheet
KST63/64
Darlington Transistor
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST63/64
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CES
EBO
C
C
STG
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -10 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CES
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -0.1mA -1.5 V
V
CE
(on) Base-Emitter On Voltage VCE= -5V, IC= -100mA -2.0 V
V
BE
f
T
* Pulse test: PW≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage IC= -100, VBE=0 -30 V
Collector Cut-off Current VCE= -30V, IE=0 -100 nA
Emitter Cut-off Current VEB= -10V, IC=0 -100 nA
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -5V, IC= -10mA
CE
= -5V, IC= -100mA
V
CE
f=100MHz
5K
10K
10K
20K
125 MHz
Marking Code
Type KST63 KST64
Mark 2U 2V
Marking
2U
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST63/64
1000k
100k
10k
, DC CURRENT GAIN
FE
h
1k
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
VCE = -5V
VCE = -5V
VBE(sat)
VCE(sat)
IC = 1000 I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
100
[MHz],
T
f
10
VCE = -5V
[mA], COLLECTOR CURRENT
C
I
1
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
VBE[V], BASE-EMITTER VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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