Fairchild Semiconductor KST56, KST55 Datasheet
KST55/56
Driver Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KST05/06
PNP Epitaxial Silicon Transistor
= KST55: - 60V
CEO
KST56: - 80V
(max) = 350mW
C
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST55/56
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -4 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.25 V
V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -100mA -1.2 V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
* Collector-Emitter Breakdown Voltage
* Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -4 V
Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA
Collector C u t-o ff C u r re n t
DC Current Gain V
Current Gain Bandwidth Product VCE= -1V, IC= -100mA
Ta=25°C unless otherwise noted
: KST55
: KST56
: KST55
: KST56
Ta=25°C unless otherwise noted
: KST55
: KST56
: KST55
: KST56
= -1mA, IB=0 -60
I
C
V
= -60V, IB=0
CE
= -80V, IB=0
V
CE
= -1V, IC= -10mA
CE
= -1V, IC= -100mA
V
CE
f=100MHz
-60
-80
-60
-80
-80
-0.1
-0.1
50
50
50 MHz
Marking
Marking Code
Type KST55 KST56
Mark 2H 2G
2H
V
V
V
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST55/56
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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