Fairchild Semiconductor KST5401 Datasheet
KST5401
High Voltage Transistor
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST5401
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -160 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
V
BE
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -160 V
Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -150 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -100V, IE=0 -50 nA
DC Current Gain VCE= -5V, IC= -1.0mA
Current Gain Bandwidth Product IC= -10mA, VCE= -10V
Output Capacitance VCB= -10V, IE=0, f=1.0MHz 6.0 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -5V, IC= -10mA
CE
= -5V, IC= -50mA
V
CE
= -50mA, IB= -5mA
I
C
I
= -50mA, IB= -5mA
C
f=100MHz
= -5V, IC= -200µA
CE
R
=10KΩ, f=10Hz to 15.7KHz
S
50
60
50
100 300 MHz
240
-0.2
-0.5
-1.0
-1.0
8.0 dB
V
V
V
V
Marking
2L
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST5401
1000
VCE = -5V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-1000
VCE = -5V
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
-10
IC = 10 I
B
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VCE(sat)
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 1MHz
I
= 0
E
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
1000
VCE = -10V
100
10
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Loading...