Fairchild Semiconductor KST5179 Datasheet
KST5179
RF Amplifier Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST5179
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 20 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 2.5 V
Collector Current 50 mA
Collector Power Dissipation (Ta=25°C) 350 mW
Derate above 25°C2.8mW/°C
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
V
BE
f
T
C
ob
h
fe
NF Noise Figure V
G
PE
Collector-Base Breakdown Voltage IC=0.01mA, IE=0 20 V
Collector-Emitter Breakdown Voltage IC=3mA, IB=0 12 V
Emitter Base Breakdown Voltage IE=0.01mA, IC=0 2.5 V
Collector Cut-off Current VCB=15V, IE=0 0.02 µA
DC Current Gain VCE=1V, IC=3mA 25
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.4 V
(sat) Base-Emitter Saturatio n Voltage IC=10mA, IB=1mA 1 V
Current Gain Bandwidth Product VCE=6V, IC=5mA, f=100MHz 900 MHz
Output Capacitance VCB=10V, IE=0, f=0.1MHz to 1MHz 1 pF
Small Signal Current Gain VCE=6V, IC=2mA, f=1K H z 25
Power Gain VCE=6V, IC=5mA, f=200MHz 15 dB
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=6V, IC=1.5mA, f=200MHz
CE
=50Ω
R
S
4.5 dB
Marking
7H
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST5179
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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