Fairchild Semiconductor KST5089, KST5088 Datasheet
KST5088/5089
KST5088/5089
Low Noise Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 4.5 V
Collector Current 50 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.8 V
V
BE
f
T
C
ob
NF Noise Figure
Collector-Base Breakdown Voltage
: KST5088
: KST5089
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current VEB=3V, IC=0 50 nA
DC Current Gain
: KST5088
: KS T 5 0 8 9
: KST5088
: KST5089
: KST5088
: KST5089
Current Gain-Bandwidth Product VCE=5V, IC=500µA, f=20MHz 50 MHz
Output Capaci tance VCB=5V, IE=0, f=100KHz 4 pF
: KST5088
: KST5089
Ta=25°C unless otherwise noted
: KST5088
: KST5089
: KST5088
: KST5089
Ta=25°C unless otherwise noted
IC=100µA, IE=0
IC=1mA, IB=0
V
=20V, IE=0
CB
=15V, IE=0
V
CB
V
=5V, IC=100µA
CE
=5V, IC=1mA
V
CE
=5V, IC=10mA
V
CE
=100µA, VCE=5V
I
C
=10KΩ, f=10Hz to 15.7KHz
R
S
35
30
30
25
35
30
30
25
300
400
350
450
300
400
50
50
900
1,200
3
2
V
V
V
V
V
V
V
V
nA
nA
dB
dB
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Marking Code
Type KST5088 KST5089
Mark 1Q 1R
KST5088/5089
Marking
1Q
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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