Fairchild Semiconductor KST5087, KST5086 Datasheet
KST5086/5087
KST5086/5087
Low Noise Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -3 V
Collector Current -50 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.85 V
V
BE
f
T
C
ob
NF Noise Figure
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -50 V
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -50 V
Collector Cut-off Current VCB= -20V, IE=0 -50 nA
DC Current Gain
: KST5086
: KS T 5 0 8 7
: KST5086
: KST5087
: KST5086
: KST5087
Current Gain Bandwidth Product VCE= -5V, IC= -500µA
Output Capaci tance VCB= -5V, IE=0
: KST5086
: KST5087
: KST5087
=25°C unless otherwise noted
a
Ta=25°C unless otherwise noted
= -5V, IC= -100µA
V
CE
V
= -5V, IC= -1mA
CE
= -5V, IC= -10mA
V
CE
f=20MHz
f=100MHz
= -100µA, VCE= -5V
I
C
=3KΩ, f=1KHz
R
S
= -5V, IC= -20mA
V
CE
=10KΩ, f=10Hz to 15.7KHz
R
S
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
150
250
150
250
150
250
40 MHz
500
800
4pF
3
2
2
dB
dB
dB
Marking Code
Type KST5086 KST5087
Mark 2P 2Q
Marking
2P
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST5086/5087
1000
VCE = -5V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100
KST5087
KST5086
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-100
VCE = -5V
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
-10
IC = 10 I
B
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VCE(sat)
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 100KHz
I
= 0
E
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
1000
100
10
1
-0.1 -1 -10 -100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE = -5V
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Loading...