Fairchild Semiconductor KST4401 Datasheet
KST4401
KST4401
Switching Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
V
CE
(sat) * Base-Emitter Sa turation Voltage IC=150mA, IB=15mA
V
BE
f
T
C
ob
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
* Collector-Emitter Breakdown Voltage IC=1.0mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Base Cut-off Curren t VCE=35V, VEB=0.4V 100 nA
Collector Cut-off Current VCE=35V, VEB=0.4V 100 nA
* DC Current Gain VCE=1V, IC=0.1mA
Current Gain Bandwidth Product IC=20mA, VCE=10V
Output Capaci tance VCB=5V, IE=0, f=100KHz 6.5 pF
Turn On Time VCC=30V, VBE=2V
Turn Off Time VCC=30V, IC=150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=1V, IC=1mA
V
CE
V
=1V, IC=10mA
CE
=1V, IC=150mA
V
CE
=2V, IC=500mA
V
CE
=500mA, IB=50mA
I
C
=500mA, IB=50mA
I
C
f=100MHz
=150mA, IB1=15mA
I
C
=15mA
I
B1=IB2
20
40
80
100
40
0.75 0.95
250 MHz
300
0.4
0.75
1.2
35 ns
255 ns
V
V
V
V
Marking
2X
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST4401
1000
VCE = 1V
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
10
[pF], CAPACITANCE
cb
C
IE = 0
f = 100KHz
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
10000
VCE = 10V
1000
[MHz],
T
f
100
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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