Fairchild Semiconductor KST43, KST42 Datasheet
KST42/43
KST42/43
High Voltage Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current 500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.5 V
V
CE
(sat) * Base-Emitter Sa turation Voltage IC=20mA, IB=2mA 0.9 V
V
BE
C
ob
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage
* Collector -Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Collector Cut-off Current VCB=200V, IE=0 0.1 µA
Emitter Cut-off Current VCB=5V, IC=0 0.1 µA
* DC Current Gain
Output Capaci tance
Current Gain Bandwidth Product VCE=20V, IC=10mA
Ta=25°C unless otherwise noted
: KST42
: KST43
: KST42
: KST43
Ta=25°C unless otherwise noted
: KST42
: KST43
: KST42
: KST43
: KST42
: KST43
IC=100µA, IE=0
IC=1mA, IB=0
VCE=10V, IC=1mA
=10V, IC=10mA
V
CE
=10V, IC=30mA
V
CE
=20V, IE=0
V
CB
f=1MHz
f=100MHz
300
200
300
200
300
200
300
200
25
40
40
3
4
50 MHz
V
V
V
V
V
V
V
V
pF
pF
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Marking Code
Type KST42 KST43
Mark 1D 1E
KST42/43
Marking
1D
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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