Fairchild Semiconductor KST4125 Datasheet
KST4125
General Purpose Transistor
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KST4125
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KST3906 for graphs
Electrical Characteristics
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -4 V
Collector Current -200 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC= -50mA, IB= -5.0mA -0.4 V
CE
(sat) * Base-Emitter Saturation Voltage IC= -50mA, IB= -5.0mA -0.95 V
V
BE
f
T
C
ob
NF Noise Figure I
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -30 V
* Collector-Emitter Breakdown Voltage IC= -1mA, IE=0 -30 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -4 V
Collector Cut-off Current VCB= -20V, IE=0 -50 nA
Emitter Cut-off Current VEB= -3V, IC=0 -50 nA
* DC Current Gain VCE= -1V, IC= -2.0mA
= -1V, IC= -50mA
V
CE
Current Gain Bandwidth Product IC= -10mA, VCE= -20V
50
25
200 MHz
150
f=100MHz
Output Capacitance VCB= -5V, IE=0, f=100KHz 4.5 pF
= -100µA, VCE= -5V
C
=1KΩ
R
S
f=10Hz to 15.7KHz
5dB
Marking
ZD
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST4125
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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