Fairchild Semiconductor KST4124 Datasheet
KST4124
General Purpose Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KST4124
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KST3904 for graphs
Electrical Characteristics
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC=50mA, IB=5.0mA 0.3 V
CE
(sat) * Base-Emitter Saturation Voltage IC=50mA, IB=5.0mA 0.95 V
V
BE
f
T
C
ob
NF Noise Figure I
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
* Collector-Emitter Breakdown Voltage IC=1.0mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=20V, IE=0 50 nA
Emitter Cut-off Current VEB=3V, IC=0 50 nA
* DC Current Gain VCE=1V, IC=2mA
=1V, IC=50mA
V
CE
Current Gain Bandwidth Product IC=10mA, VCE=20V
120
60
300 M Hz
360
f=100MHz
Output Capacitance VCB=5V, IE=0, f=1.0MHz 4 pF
=100µA, VCE=5V
C
=1KΩ
R
S
f=10Hz to 15.7KHz
5dB
Marking
ZC
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST4124
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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