Fairchild Semiconductor KSP8599, KSP8598 Datasheet
KSP8598/8599
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
= KSP8598: 60V
CEO
KSP8599: 80V
(max)=625mW
C
1
TO-92
1. Emitter 2. Base 3. Collector
KSP8598/8599
Absolute Maximum Ratings T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: KSP8598
: KSP8599
-60
-80
Collector-Emitter Voltage
: KSP8598
: KSP8599
-60
-80
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP8598
: KSP8599
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP8598
: KSP8599
BV
I
CBO
EBO
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current
: KSP8598
: KSP8599
I
CEO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -100mA, IB= -5mA
V
CE
(on) * Base-Emitter On Voltage
V
BE
Collector Cut-off Current VCE= -60V, IB=0 -100 nA
Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
* DC Current Gain VCE= -5V, IC= -1mA
: KSP8598
: KSP8599
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
Output Capaci tance VCB= -5V, IE=0
IC= -100µA, IE=0
IC= -10mA, IB=0
V
= -60V, IE=0
CB
= -80V, IE=0
V
CB
= -5V, IC= -10mA
V
CE
V
= -5V, IC= -100mA
CE
I
= -100mA, IB= -10mA
C
V
= -5V, IC= -1mA
CE
= -5V, IC= -10mA
V
CE
f=100MHz
f=1MHz
-60
-80
-60
-80
-100
-100
100
300
100
75
-0.4
-0.3
-0.5
-0.6
-0.7
-0.8
150 MHz
8pF
V
V
V
V
V
V
V
V
nA
nA
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
Typical Characteristics
KSP8598/8599
1000
VCE = -5V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
100
10
IE = 0
f = 1MHz
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
VCE = -5V
[MHz],
T
f
100
1
-0.1 -1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacit a nc e Figure 4. Current Gai n Bandwidth Product
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
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