Fairchild Semiconductor KSP8099, KSP8098 Datasheet
KSP8098/8099
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
= KSP8098: 60V
CEO
KSP8099: 80V
(max)=625mW
C
1
TO-92
1. Emitter 2. Base 3. Collector
KSP8098/8099
Absolute Maximum Ratings T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: KSP8098
: KSP8099
60
80
Collector-Emitter Voltage
: KSP8098
: KSP8099
60
80
Emitter-Base Voltage 6 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP8098
: KSP8099
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP8098
: KSP8099
BV
I
CBO
EBO
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current
: KSP8098
: KSP8099
I
CEO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=5mA
V
CE
(on) * Base-Emitter On Voltage
V
BE
Collector Cut-off Current VCE=60V, IB=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
DC Current Gain VCE=5V, IC=1mA
: KSP8098
: KSP8099
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Current Gain Bandwidth Product VCE=5V, IC=10mA
Output Capaci tance VCB=5V, IE=0
IC=100µA, IE=0
IC=10mA, IB=0
=60V, IE=0
V
CB
=80V, IE=0
V
CB
=5V, IC=10mA
V
CE
=5V, IC=100mA
V
CE
=100mA, IB=10mA
I
C
=5V, IC=1mA
V
CE
=5V, IC=10mA
V
CE
f=100MHz
f=1MHz
60
80
60
80
100
100
100
300
100
75
0.4
0.3
0.5
0.6
0.7
0.8
150 MHz
6pF
V
V
V
V
V
V
V
V
nA
nA
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
Typical Characteristics
KSP8098/8099
1000
VCE = 5V
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
10
IE = 0
f = 1MHz
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
VCE = 5V
[MHz],
T
f
100
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacit a nc e Figure 4. Current Gai n Bandwidth Product
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
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