Fairchild Semiconductor KSP77, KSP75 Datasheet
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
CES
= KSP75: 40V
KSP76: 50V
KSP77: 60V
(max)=625mW
C
KSP75/76/77
KSP75/76/77
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CES
Collector-Base Voltage
V
I
P
T
T
EBO
C
C
J
STG
Emitter-Base Voltage -10 V
Collector Current -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
CBO
I
CBO
I
EBO
I
CES
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -0.1mA -1.5 V
V
CE
(on) Base-Emitter On Voltage VCE= -5V, IC= -100mA 2 V
V
BE
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current VCE= -10V, IB=0 -100 nA
Collector Cut-off Current
DC Current Gain VCE= -5V, IC= -10mA
Ta=25°C unless otherwise noted
: KSP75
: KSP76
: KSP77
Ta=25°C unless otherwise noted
IC= -100µA, IB=0
: KSP75
: KSP76
: KSP77
IC= -100µA, IE=0
: KSP75
: KSP76
: KSP77
: KSP75
: KSP76
: KSP77
: KSP75
: KSP76
: KSP77
V
= -30V, IE=0
CE
= -40V, IE=0
V
CE
= -50V, IE=0
V
CE
V
= -30V, IE=0
CE
= -40V, IE=0
V
CE
= -50V, IE=0
V
CE
V
= -5V, IC= -100mA
CE
-40
-50
-60
-40
-50
-60
-40
-50
-60
-100
-100
-100
-500
-500
-500
10K
10K
V
V
V
V
V
V
V
V
V
nA
nA
nA
nA
nA
nA
nA
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
Typical Characteristics
KSP75/76/77
1000k
100k
10k
, DC CURRENT GAIN
FE
h
1k
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
200
100
10
[mA], COLLECTOR CURRENT
C
I
VCE = -5V
VCE = -5V
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-1 -10 -100
VBE(sat)
VCE(sat)
IC = 1000 I
B
-400
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
-10k
-1k
-100
[A], COLLECTOR CURRENT
C
I
TC = 25OC
Ta = 25OC
100µS
1mS
1S
1
-0.0 -0.4 -0.8 -1.2 -1.6 -2 .0 -2.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
-10
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A1, July 2001
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