Fairchild Semiconductor KSP6520 Datasheet
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
CEO
=25V
(max)=625mW
C
KSP6520/6521
KSP6520/6521
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 4 V
Collector Current 100 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typl Max. Units
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=5mA 0.5 V
V
CE
C
ob
NF Noise Figure I
Collector-Emitter Breakdown Voltage IC=0.5mA, IB=0 25 V
Emitter Base Breakdown Voltage IC=10, IC=0 4 V
Collector Cut-off Current VCB=30V, IE=0
DC Current Gain
Output Capacitance VCB=10V, IE=0
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=20V, IE=0
V
CE
: KSP6520
I
=100µA, VCE=10V
C
: KSP6521
: KSP6520
=2mA, VCE=10V
I
C
: KSP6521
f=100KHz
=10µA, VCE=5V
C
=10KΩ
R
S
f=10Hz to 10KHz
100
150
200
300
50
50
400
600
3.5 pF
3dB
nA
nA
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSP6520/6521
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
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