Fairchild Semiconductor KSP64, KSP63, KSP62 Datasheet
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
CES
=KSP62: 20V
KSP63/64: 30V
(max)=625mW
C
KSP62/63/64
KSP62/63/64
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
V
V
I
P
T
T
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Emitter-Base Voltage -10 V
Collector Current -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CES
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage
V
CE
V
(on) * Base-Emitter On Voltage
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current VBE= -10V, IC=0 -100 nA
* DC Current Gain
Current Gain Bandwidth Product
Ta=25°C unless otherwise noted
: KSP62
: KSP63/64
: KSP62
: KSP63/64
Ta=25°C unless otherwise noted
IC= -100µA, IB=0
: KSP62
: KSP63/64
: KSP62
: KSP63/64
: KSP62
V
= -15V, IE=0
CB
= -30V, IE=0
V
CB
= -5V, IC= -10mA
V
CE
: KSP63
: KSP64
= -5V, IC= -100mA
: KSP63
V
CE
: KSP64
: KSP62
: KSP63/64
: KSP62
: KSP63/64
= -10mA, IB= -0.01mA
I
C
I
= -100mA, IB= -0.1mA
C
= -5V, IC= -10mA
V
CE
= -5V, IC= -100mA
V
CE
VCE= -5V, IC= -100mA
: KSP63/64
f=100MHz
-20
-30
-20
-30
-20
-30
-100
-100
20K
5K
10K
10K
20K
-1.0
-1.5
-1.4
-2
125 MHz
V
V
V
V
V
V
nA
nA
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP62/63/64
1000k
100k
10k
, DC CURRENT GAIN
FE
h
1k
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
VCE = -5V
VCE = -5V
VBE(sat)
VCE(sat)
IC = 1000 I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
100
[MHz],
T
f
10
VCE = -5V
[mA], COLLECTOR CURRENT
C
I
1
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
VBE[V], BASE-EMITTER VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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