Fairchild Semiconductor KSP55, KSP56 Datasheet
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KSP05/06
CEO
=KSP55: 60V
KSP56: 80V
(max) =625mW
C
KSP55/56
KSP55/56
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
CEO
C
C
J
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -4 V
Collector Current -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.25 V
V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -100mA -1.2 V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -4 V
Collector Cut-off Current
Collector Cut-off Current VCE= -60V, IB=0 -0.1 µA
DC Current Gain VCE= -1V, IC= -10mA
Current Gain Bandwidth Product VCE= -2V, IC= -10mA
Ta=25°C unless otherwise noted
: KSP55
: KSP56
: KSP55
: KSP56
Ta=25°C unless otherwise noted
: KSP55
: KSP56
: KSP55
: KSP56
= -1mA, IB=0 -60
I
C
V
= -60V, IE=0
CB
= -80V, IE=0
V
CB
= -1V, IC= -100mA
V
CE
f=100MHz
-60
-80
-60
-80
-80
-0.1
-0.1
50
50
50 MHz
V
V
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP55/56
1000
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-1000
-100
-10
VCE = -1V
VCE = -1V
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
100
[MHz],
T
f
VCE = -1V
[mA], COLLECTOR CURRENT
C
I
-1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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