Fairchild Semiconductor KSP5179 Datasheet
High Frequency Transistor
KSP5179
KSP5179
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
CBO
CEO
EBO
C
C
Collector-Base Voltage 20 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 2.5 V
Collector Current 50 mA
Collector Power Dissipation (Ta=25°C) 200 mW
Derate above 25°C1.6mW/°C
P
C
Collector Power Dissipation (TC=25°C) 300 mW
Derate above 25°C2.4mW/°C
T
T
J
STG
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC=3mA, IB=0 12 V
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.4 V
V
CE
(sat) B ase-E mit ter Saturati on Voltage IC=10mA, IB=1mA 1 V
V
BE
f
T
C
ob
h
fe
C
c ⋅ rbb’
NF Noise Figure V
Collector-Base Breakdown Voltage IC=10µA, IE=0 20 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 2.5 V
Collector Cut-off Current VCB=15V, IE=0
DC Current Gain VCB=1V, IC=3mA 25 250
Current Gain Bandwidth Product VCE=6V, IC=5mA 900 2000 MHz
Output Capacitance VCB=10V, IE=0, f=0.1 to1 MHz 1 pF
Small Signal Current Gain VCE=6V, IC=2mA, f=1KHz 25 300
Collector Base Time Constant VCE=6V, IE=2mA, f=31.9MHz 3 14 ps
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=15V, IE=0, Ta=150°C
V
CB
=6V, IC=1.5mA, f=200MHz
CE
R
=50Ω
S
0.02
1
4.5 dB
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSP5179
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
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