Fairchild Semiconductor KSD1621 Datasheet
KSD1621
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
NPN Epitaxial Silicon Transistor
1
SOT-89
1. Base 2. Collector 3. Emitter
KSD1621
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 6 V
Collector Current 2 A
Collector Power Dissipation 500
1.3
mW
W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.18 0.4 V
CE
(sat) Base-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.85 1.2 V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
* Pulse Width=20µs, Duty Cycle≤1%
Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=20V, IE=0 100 nA
Emitter Cut-off Current VBE=4V, IC=0 100 nA
DC Current Gain VCE=2V, IC=0.1A
=2V, IC=1.5A
V
CE
100
65
560
Current Gain Bandwidth product VCE=10V, IC=50mA 150 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 19 pF
* Turn O n Time VCC=12V, VBE=5V
I
= -IB2=25mA
* Storage Time 500 ns
* Fall Time 25 ns
B1
=0.5A, RL=25Ω
I
C
60 ns
hFE Classification
Classification R S T U
h
FE
100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560
Marking
SYX
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KSD1621
2.0
IB = 50mA
1.6
1.2
0.8
[A], COLLECTOR CURRENT
0.4
C
I
0.0
0.0 0.2 0.4 0.6 0.8 1.0
IB = 30mA
IB = 20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IB = 10mA
IB = 8mA
IB = 6mA
IB = 4mA
IB = 2mA
IB = 0
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE= 2V
IC[A], COLLECTOR CURRENT
B
3.2
2.8
2.4
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
C
I
0.4
0.0
0.00.20.40.60.81.01.2
VCE = 2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
IE=0
f = 1MHz
1000
100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
10
0.1 1
VCE = 10V
IC[A], COLLECTOR CURRENT
Rev. A2, November 2002
Loading...