Fairchild Semiconductor KSD1417 Datasheet
KSD1417
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1022
KSD1417
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
ICP
IB
PC
PC
TJ
T
CBO
CEO
EBO
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current (DC) 7 A
Collector Current (Pulse) 10 A
Base Current 0.7 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
IEBO
h FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 6mA 1.5 2.5 V
V
BE
t
ON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Turn ON Time V
Storage Time 3 µs
Fall Time 2.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 60V, IE = 0 100 µA
CB
= 5V, IC = 0 3 mA
EB
= 3V, IC = 3A
CE
V
= 3V, IC = 7A
CE
= 7A, IB = 14mA
I
C
= 45V, IC = 4.5A
CC
I
= -IB2 = 6mA
B1
= 10Ω
R
L
2K
1K
15K
0.9
1.2
1.5
2
0.8 µs
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSD1417
10
8
IB = 1.4mA
6
IB = 1.2mA
IB = 1mA
IB = 0.8mA
4
[A], COLLECTOR CURRENT
2
C
I
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
VBE(sat)
1
VCE(sat)
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Ic = 500 I
IB = 0
10k
1k
, DC CURRENT GAIN
FE
h
100
0.1 1 10 100
VCE = 3V
IC[A], COLLECTOR CURRENT
B
10
9
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE = 3V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
ICmax(pulse)
10
ICmax(DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
100mS
DC
10ms
1mS
100uS
Figure 4. Base-Emitter On Voltage
40
35
30
25
MAX
CEO
V
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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