Fairchild Semiconductor KSD1408 Datasheet
Power Amplifier Applications
• Complement to KSB1017
KSD1408
KSD1408
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current 4 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
IEBO
h FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 3A. IB = 0.3A 0.45 1.5 V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 80V, IE = 0 30 µA
CB
= 5V, IC = 0 100 µA
EB
= 5V, IC = 0.5A
CE
= 5V, IC = 3A
V
CE
= 5V, IC = 3A 1 1.5 V
CE
= 5V, IC = 0.5A 8 MHz
CE
= 10V, f = 1MHz 90 pF
CB
40
15 50
240
h
Classification
FE1
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSD1408
= 200mA
I
B
= 160mA
I
B
= 120mA
I
B
= 100mA
I
B
= 80mA
I
B
4.0
= 240mA
I
3.2
B
IB = 60mA
2.4
1.6
[A], COLLECTOR CURRENT
0.8
C
I
0.0
012345
IB = 40mA
IB = 20mA
IB = 0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.001 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.001 0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.4 0.8 1.2 1.6
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
ICmax(pulse)
IC(max)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
1mS
10ms
100mS
1S
DC
MAX
CEO
V
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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