Fairchild Semiconductor KSD1406 Datasheet
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
KSD1406
KSD1406
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current 3 A
Base Current 0.5 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
IEBO
h FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.5 µs
Fall Time 0.8 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 60V, IE = 0 100 µA
CB
= 7V, IC = 0 100 µA
EB
= 5V, IC = 0.5A
CE
V
= 5V, IC = 3A
CE
= 5V, IC = 0.5A 0.7 1 V
CE
= 5V, IC = 0.5A 3 MHz
CE
= 10V, f = 1MHz 70 pF
CB
= 30V, IC = 1A
CC
= -IB2 = 0.2A
I
B1
= 30Ω
R
L
60
20
0.8 µs
300
h
Classification
FE1
Classification O Y G
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 150 ~ 300
Typical Characteristics
KSD1406
4
IB = 90mA
3
IB = 80mA
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
2
IB = 30mA
IB = 20mA
1
IB = 10mA
Ic[A], COLLECTOR CURRENT
0
012345678
IB = 0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.001 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.4 0.8 1.2 1.6
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage
10
ICmax(pulse)
IC(max)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
1mS
10ms
100mS
1S
DC
MAX
CEO
V
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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