Fairchild Semiconductor KSD1362 Datasheet
KSD1362
B/W TV Horizontal Deflection Output
• Collector- Base Voltage : V
• Collector Current : I
= 5A
C
• Collector Dissipation : P
= 150V
CBO
= 20W (TC=25°C)
C
KSD1362
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
PC
T
T
CBO
CEO
EBO
J
STG
Collector-Base Voltage 150 V
Collector-Emitter Voltage 70 V
Emitter-Base Voltage 8 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 20 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BVEBO
I
CBO
hFE
(sat) Collector-Emitter Saturation Voltage
V
CE
(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
V
BE
f
T
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 150 V
Collector-Emitter Breakdown Voltage IC = 20mA, R
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 8 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 20 µA
CB
= 5V, IC = 5A 20 140
CE
= 5A, IB = 0.5A 1 V
IC
= 5V, IC = 0.5A 10 MHz
CE
=∞ 70 V
BE
hFE Classification
Classification N R O
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
20 ~ 50 40 ~ 80 70 ~ 140
Typical Characteristics
KSD1362
IB = 45mA
IB = 40mA
IB = 35mA
IB = 30mA
5
4
3
IB = 50mA
IB = 25mA
2
IB = 20mA
IB = 15mA
[A], COLLECTOR CURRENT
1
C
I
0
0 2 4 6 8 101214161820
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = 10mA
IB = 5mA
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
1000
100
[pF], CAPACITANCE
ob
C
10
110100
f = 1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
10ms
200ms
Figure 4. Collector Output Capacitance
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
0 25 50 75 100 125 1 50 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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