Fairchild Semiconductor KSD1273 Datasheet
KSD1273
High hFE, AF Power Amplifier
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
no Insulator.
KSD1273
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
ICP
IB
P
C
PC
TJ
TSTG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current 1 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
ICEO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage
V
CE
f
T
Collector-Emitter Voltage IC = 25mA, IB = 0 60 V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 80V, IE = 0 100 µA
CB
= 60V, IB = 0 100 µA
CE
= 6V, IC = 0 100 µA
EB
= 4V, IC = 0.5A 500 2500
CE
= 2A, IB = 0.05A 1 V
IC
= 12V, IC = 0.2A 30 MHz
CE
h
Classification
FE
Classification Q P O
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
500 ~ 1000 800 ~ 1500 1200 ~ 2500
Typical Characteristics
KSD1273
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ic[A], COLLECTOR CURRENT
0.2
0.0
012345678910
IB = 1.2mA
IB = 800uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IB = 1mA
IB = 600uA
IB = 400uA
IB = 200uA
VCE = 4V
25OC
O
75
C
125OC
10000
VCE = 4V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
10000
1000
100
10
(sat)[mV], SATURATION VOLTAGE
CE
V
1
0.01 0.1 1 10
IC = 50 I
B
125oC
75oC
25oC
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
BE
V
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
VBE(sat)
Collector-Emitter Saturation Voltage
IC = 50 I
B
25oC
75oC
o
C
125
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
VCE(sat)
IC = 40 I
B
Rev. A1, June 2001
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