Fairchild Semiconductor KSD1222 Datasheet
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Built in a Damper Diode at E-C
• Darlington TR
• Complement to KSB907
KSD1222
KSD1222
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
CBO
CEO
EBO
C
C
Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current 3 A
Base Current 0.3 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
T
J
T
STG
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 4mA 1.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 4mA 2 V
V
BE
t
ON
tSTG
t
F
Collector-Emitter Breakdown Voltage IC = 25mA, IB = 0 40 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn On Time V
Storage Time 1 µs
Fall Time 0.2 µs
TC=25°C unless otherwise noted
=25°C) 1 W
a
TC=25°C unless otherwise noted
= 60V, IE = 0 20 µA
CB
= 5V, IC = 0 2.5 mA
EB
= 2V, IC = 1A
CE
V
= 2V, IC = 3A
CE
= 30V, IC = 3A
CC
= -IB2 = 6mA
I
B1
= 10Ω
R
L
2000
1000
0.1 µs
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Typical Characteristics
KSD1222
5
4
3
2
[A], COLLECTOR CURRENT
1
C
I
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
A
µ
=300
I
B
A
µ
275
250µA
225
200µA
IB = 175µA
IB = 0
A
µ
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
IC = 500I
B
VBE(sat)
VCE(sat)
4
3
2
VCE = 2V
VCE=2V
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
0.1
V
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC MAX. (PUL S E)
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1ms
10ms
DC
MAX.
CEO
V
Figure 5. Safe Operating Area Figure 6. Power Derating
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.8 1.6 2.4 3.2
VBE[V], BASE EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
20
15
10
[W], POWER DISSIPATION
5
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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