Fairchild Semiconductor KSD1021 Datasheet
KSD1021
Audio Frequency Power Amplifier
• Complement to KSB811
• Collector Current : I
• Collector Dissipation : P
C
=1A
=350mW
C
KSD1021
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 1 A
Collector Power Dissipation 350 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.1A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=1A, IB=0.1A 1.2 V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
DC Current Gain VCE=1V, IC=100mA 70 400
Current Gain Band Width Product VCE=6V, IC=10mA 130 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 16 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSD1021
IB = 4.5mA
IB = 4.0mA
IB = 3.5mA
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
[A], COLLECTOR CURRENT
C
I
0.1
0.0
012345678910
IB = 5.0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE(sat)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
100
10
[pF], CAPACITANCE
ob
C
f=1MHz
=0
I
E
(sat), V
0.01
BE
V
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
[MHz],
T
f
10
1
CURRENT GAIN-BAND WIDTH PROD UCT
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
:
VCE = 6V
500
450
400
350
300
250
200
150
100
[mW], POWER DISSIPATION
C
P
50
0
0 25 50 75 100 125 150 175 200 225 250
Ta[oC], AMBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001
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