Fairchild Semiconductor KSC815 Datasheet
KSC815
Low Frequency Amplifier & High Frequency
Oscillator
• Collector-Base Voltage : V
• Complement to KSA539
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
CBO
=60V
KSC815
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current 200 mA
Collector Power Dissipation 400 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE=10V, IC=10mA 0.6 0.65 0.9 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=150mA, IB=15mA 0.15 0.4 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=150mA, IB=15mA 0.83 1.1 V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 45 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=45V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=50mA 40 400
Current Gain Bandwidth Product VCE=10V, IC=10mA 100 200 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 4 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSC815
100
90
80
70
60
50
40
30
[mA], COLLECTOR CURRENT
20
C
I
10
0
0 5 10 15 20 25 30 35 40 45 50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100
IC[mA], COLLECTOR CURRENT
V
BE(sat)
V
CE(sat)
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
IC=10I
10000
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
VCE=1V
IC[mA], COLLECTOR CURRENT
B
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE=1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f = 1MHz
1000
IE=0
100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
10
110
IC[mA], COLLECTOR CURRENT
VCE=10V
Rev. A2, September 2002
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