Fairchild Semiconductor KSC5047 Datasheet
Feature
• High Current Gain
• Low Collector Emitter Saturation Voltage
KSC5047
KSC5047
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
IB
PC
T
J
T
STG
Collector-Base Voltage 100 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 15 V
Collector Current 15 A
Base Current 4 A
Collector Dissipation (TC=25°C) 100 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.12A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.12A 1.2 V
V
BE
tON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 50 V
Collector Cut-off Current V
Emitter-Base Breakdown Voltage V
DC Current Gain V
Turn On Time V
Storage Time 2.5 µs
Fall Time 0.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 100 µA
CB
= 15V, IC= 0 100 µA
EB
= 5V, IC = 5A 40
CE
= 20V, IC = 5A
CC
I
= - I
= 4Ω
= 0.12A
B2
R
B1
L
0.5 µs
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
Typical Characteristics
KSC5047
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10000
1000
100
[pF], CAPACITANCE
ob
C
10
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 5V
10
1
VBE(sat)
(sat), SATURATION VOLTAGE
0.1
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VCE(sat)
IC=50 I
B
IC [A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
160
140
120
100
80
60
40
[W], POWER DISSIPAT ION
C
P
20
0
0 25 50 75 100 125 150 175
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
TC[oC], TEMPERATURE
Rev. B1, September 2002
Loading...