Fairchild Semiconductor KSC5042M Datasheet
KSC5042M
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BV
•Small C
• Wide S.O.A
=2.8pF (Ty p .)
ob
• High reliability
NPN Triple Diffused Planar Silicon Transistor
CEO
=900V
1
TO-126
1. Emitter 2.Collector 3.Base
KSC5042M
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 900 V
Emitter-Base Voltage 5 V
Collector Current (DC) 100 mA
Collector Current (Pulse) 300 mA
Collector Dissipation (TC=25°C) 4 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE (sat)
C
ob
CBO
CEO
EBO
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1500 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 900 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= 900V, IE = 0 10 µA
CB
= 4V, IC = 0 10 µA
EB
= 5V, IC = 10mA 30
CE
Collector-Emitter Saturation Voltage IC = 20mA, IB = 4mA 5 V
Base-Emitter Saturation Voltage IC = 20mA, IB = 4mA 2 V
Output Capacitance V
= 100V, f = 1MHz 2.8 pF
CB
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics
KSC5042M
100
IB = 10mA
90
80
70
60
50
40
30
[A], COLLECTOR CURRENT
C
20
I
10
0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
IB = 1mA
100
10
, DC CURRENT GAIN
FE
h
1
110100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
B
10
[A], COLLECTOR CURRENT
C
I
1
0.1 1 10 100
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
f = 1MHz
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Base Capacitance
Collector-Emitter Saturation Voltage
IC(Pulse)
ICMAX
100
10
[mA], COLLECTOR CURRENT
C
I
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
200
s
µ
s
500
1ms
µ
s
10ms
D.C
8
6
TC = 25OC
4
Ta = 25OC
2
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Loading...