Fairchild Semiconductor KSC5042F Datasheet
KSC5042F
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BV
•Small C
•Wide S.O.A
=2.8pF (Typ.)
ob
• High reliability
NPN Triple Diffused Planar Silicon Transistor
CEO
=900V
1
TO-220F
1.Base 2.Collector 3.Emitter
KSC5042F
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 900 V
Emitter-Base Voltage 5 V
Collector Current (DC) 100 mA
Collector Current (Pulse) 300 mA
Collector Dissipation (TC=25°C) 6 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Uni ts
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 4mA 5 V
V
CE
(sat) Base-Emitter Saturatio n Voltage IC = 20mA, IB = 4mA 2 V
V
BE
C
ob
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1500 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 900 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
= 900V, IE = 0 10 µA
CB
= 4V, IC = 0 10 µA
EB
= 5V, IC = 10mA 30
CE
= 100V, f = 1MHz 2.8 pF
CB
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics
KSC5042F
I
= 7mA
B
I
= 6mA
B
I
= 5mA
B
I
= 4mA
B
= 3mA
I
B
IB = 0mA
I
= 2mA
B
100
= 1mA
I
B
10
, DC CURRENT GAIN
FE
h
1
110100
IC[mA], COLLECTOR CURRENT
100
= 10mA
I
B
= 9mA
I
B
= 8mA
I
B
80
60
40
[A], COLLECTOR CURRENT
C
20
I
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 5 I
B
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 5V
f = 1MHz
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Base Capacitance
Collector-Emitter Saturation Voltage
ICP(max)
IC(max)
100
10
[mA], COLLECTOR CURRE NT
C
I
1
1 10 100 1000
10
m
s
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
8
100
200
µ
s
500
µ
1
s
m
µ
s
s
7
6
5
4
3
2
[W], POWER DISSIPATION
C
P
1
0
0 25 50 75 100 125 150 175
T
c
T
a
TC[oC], TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
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